sot23 pnp silicon planar medium power transistors issue 4 - june 1996 partmarking details ? BCW67a ? da BCW67ar ? 4w BCW67b ? db BCW67br ? 5w BCW67c ? dc BCW67cr ? 6w bcw68f ? df bcw68fr ? 7t bcw68g ? dg bcw68gr ? 5t bcw68h ? dh bcw68hr ? 7n complementary types ? BCW67 ? bcw65 bcw68 ? bcw66 absolute maximum ratings. parameter symbol BCW67 bcw68 unit collector-emitter voltage v ces -45 -60 v collector-emitter voltage v ceo -32 -45 v emitter-base voltage v ebo -5 v peak pulse current(10ms) i cm -1000 ma continuous collector current i c -800 ma base current i b -100 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c BCW67 bcw68 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-emitter breakdown voltage BCW67 bcw68 v (br)ceo -32 -45 vi ceo =-10ma i ceo =-10ma BCW67 bcw68 v (br)ces -45 -60 i c =-10 m a i c =-10 m a emitter-base breakdown voltage v (br)ebo -5 v i ebo =-10 m a collector-emitter cut-off current BCW67 bcw68 i ces -20 -10 -20 -10 na m a na m a v ces =-32v v ces =-32v ,t amb =150 c v ces =-45v v ces =-45v , t amb =150c emitter-base cut-off current i ebo -20 na v ebo =-4v collector-emitter saturation voltage v ce(sat) -0.7 -0.3 v v i c =-100ma, i b = -10ma i c = -500ma, i b =-50ma* base-emitter saturation voltage v be(sat) -2 v i c =-500ma, i b =-50ma* static forward current transfer BCW67a bcw68f h fe 75 100 35 170 250 i c =-10ma, v ce =-1v i c =-100ma, v ce =-1v* i c =-500ma, v ce =-2v* BCW67b bcw68g h fe 120 160 60 250 400 i c =-10ma, v ce =-1v i c =-100ma, v ce =-1v* i c =-500ma, v ce =-2v* BCW67c bcw68h h fe 180 250 100 350 630 i c =-10ma, v ce =-1v i c =-100ma, v ce =-1v* i c =-500ma, v ce =-2v* transition frequency f t 100 mhz i c =-20ma, v ce =-10v f = 100mhz collector-base capacitance c cbo 12 18 pf v cbo =-10v, f =1mhz emitter-base capacitance c ebo 80 pf v ebo =-0.5v, f =1mhz noise figure n 2 10 db i c = -0.2ma, v ce =- 5v r g =1k w, f=1kh d f=200hz switching times: turn-on time turn-off time t on t off 100 400 ns ns i c =-150ma i b1 =- i b2 =-15ma r l =150 w spice parameter data is available upon request for this device *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% c b e sot23 BCW67 bcw68 3 - 29 3 - 30
sot23 pnp silicon planar medium power transistors issue 4 - june 1996 partmarking details ? BCW67a ? da BCW67ar ? 4w BCW67b ? db BCW67br ? 5w BCW67c ? dc BCW67cr ? 6w bcw68f ? df bcw68fr ? 7t bcw68g ? dg bcw68gr ? 5t bcw68h ? dh bcw68hr ? 7n complementary types ? BCW67 ? bcw65 bcw68 ? bcw66 absolute maximum ratings. parameter symbol BCW67 bcw68 unit collector-emitter voltage v ces -45 -60 v collector-emitter voltage v ceo -32 -45 v emitter-base voltage v ebo -5 v peak pulse current(10ms) i cm -1000 ma continuous collector current i c -800 ma base current i b -100 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c BCW67 bcw68 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-emitter breakdown voltage BCW67 bcw68 v (br)ceo -32 -45 vi ceo =-10ma i ceo =-10ma BCW67 bcw68 v (br)ces -45 -60 i c =-10 m a i c =-10 m a emitter-base breakdown voltage v (br)ebo -5 v i ebo =-10 m a collector-emitter cut-off current BCW67 bcw68 i ces -20 -10 -20 -10 na m a na m a v ces =-32v v ces =-32v ,t amb =150 c v ces =-45v v ces =-45v , t amb =150c emitter-base cut-off current i ebo -20 na v ebo =-4v collector-emitter saturation voltage v ce(sat) -0.7 -0.3 v v i c =-100ma, i b = -10ma i c = -500ma, i b =-50ma* base-emitter saturation voltage v be(sat) -2 v i c =-500ma, i b =-50ma* static forward current transfer BCW67a bcw68f h fe 75 100 35 170 250 i c =-10ma, v ce =-1v i c =-100ma, v ce =-1v* i c =-500ma, v ce =-2v* BCW67b bcw68g h fe 120 160 60 250 400 i c =-10ma, v ce =-1v i c =-100ma, v ce =-1v* i c =-500ma, v ce =-2v* BCW67c bcw68h h fe 180 250 100 350 630 i c =-10ma, v ce =-1v i c =-100ma, v ce =-1v* i c =-500ma, v ce =-2v* transition frequency f t 100 mhz i c =-20ma, v ce =-10v f = 100mhz collector-base capacitance c cbo 12 18 pf v cbo =-10v, f =1mhz emitter-base capacitance c ebo 80 pf v ebo =-0.5v, f =1mhz noise figure n 2 10 db i c = -0.2ma, v ce =- 5v r g =1k w, f=1kh d f=200hz switching times: turn-on time turn-off time t on t off 100 400 ns ns i c =-150ma i b1 =- i b2 =-15ma r l =150 w spice parameter data is available upon request for this device *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% c b e sot23 BCW67 bcw68 3 - 29 3 - 30
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